8-inch Vertical LPCVD Furnace
Function
Technical Parameters
Bhadra? 200 Series Vertical Furnace
Advantage
Primarily used for 8-inch oxidation, annealing, and LPCVD processes.
Consultationor call:
86-18924169069 / 020-31569374
Technical Parameters
Wafer size: 8 inches
Process Types: Oxidation, Annealing, LPCVD (SiN/POLY/TEOS/HTO)
Polysilicon (Poly) : Used as Gate and Dummy Gate
Silicon Nitride (Nitride) : Used as the final passivation protection layer, mask process and shallow trench isolation process for silicon wafers
Silicon dioxide (TEOS) : Used as a filler for insulating film and shallow trench isolation
Compatible material: Silicon
Application fields: Power semiconductors, Integrated circuits, Research
